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January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G D-PAK I-PAK G S FDD Series FDU Series G D S S Absolute Maximum Ratings Symbol Parameter FDD6N50/FDU6N50 Unit VDSS Drain-Source Volt... See More ⇒

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