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December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ.12nC) DMOS technology. Low Crss ( Typ. 8pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings Un... See More ⇒

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