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September 2009 UniFETTM FDP18N20F / FDPF18N20FT tm N-Channel MOSFET 200V, 18A, 0.14 Features Description RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 20nC) stripe, DMOS technology. Low Crss ( Typ. 24pF) This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improve dv/dt capability correction. RoHS compliant D G TO-220F TO-220 G D S G D S FDPF Series FDP Series S MOSFET Maximum Ratings TC = 25oC unless... See More ⇒

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