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October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175 C maximum junction temperature rating suited for low voltage applications such as automotive, DC/ RoHS Compliant DC converters, and high efficiency switching for power management in portable and battery operated products. ... See More ⇒

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 fqb50n06 fqi50n06.pdf Design, MOSFET, Power

 fqb50n06 fqi50n06.pdf RoHS Compliant, Service, Triacs, Semiconductor

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