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October 2008 QFET FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology is especially tailored to minimize Fast switching on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation modes. These devices are RoHS Compliant well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S Absolute Maximum Ratings TC ... See More ⇒

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