All Transistors. Equivalents Search

View fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu detailed specification:

May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S AbsoIute Maximum Ratings T = 25 C unless otherwise noted SymboI ... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf Design, MOSFET, Power

 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf Database, Innovation, IC, Electricity