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November 2013 FQP12P10 P-Channel QFET MOSFET -100 V, -11.5 A, 290 m Description Features These P-Channel enhancement mode power field effect -11.5 A, -100 V, RDS(on) = 290 m (Max.) @ VGS = -10 V, transistors are produced using Fairchild s proprietary, ID = -5.75 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 21 nC) technology has been especially tailored to minimize on- Low Crss (Typ. 65 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and 175oC Maximum Junction Temperature Rating commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. S G G DS TO-220 D o Absolute Maximum Ratings TC = 25 C unless otherwise n... See More ⇒

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