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August 2014 FQP15P12 / FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Description Features This P-Channel enhancement mode power MOSFET is -15 A, -120 V, RDS(on) = 0.2 (Max.) @ VGS=-10 V, ID = -7.5 A produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 29 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 110 pF) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy 175 C Maximum Junction Temperature Rating strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G G DS G DS TO-220 TO-220F D Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol Parameter FQ... See More ⇒

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