All Transistors. Equivalents Search

 

View fqp46n15 detailed specification:

fqp46n15fqp46n15

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well 175 C maximum junction temperature rating suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. D G GD TO-220... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 fqp46n15.pdf Design, MOSFET, Power

 fqp46n15.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqp46n15.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.