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April 2014 FQP8N60C N-Channel QFET MOSFET 600 V, 7.5 A, 1.2 Description Features These N-Channel enhancement mode power field effect 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 3.75 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tailored to minimize on- Low Crss (Typ. 12 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G GD S TO-220 S o Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol Parameter FQP8N60C Unit VDSS D... See More ⇒

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