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View irfr110a irfu110a detailed specification:

IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.289 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 100 V Continuous Drain Current (TC=25 C) 4.7 ID A Continuous Drain Current (TC=100 C) 3 1 IDM Drain Current-Pulsed O 19 A + VGS Gate-to-Source Voltage _ 0 V 2 EAS Single Pulsed Avalanche Energy 59 mJ O IAR Avalanche Current 1 4.7 A O EAR Repetitive Avalanche Energy 1 2 mJ O 3 dv/dt Peak Diode Recovery dv/dt O 6.5 V/ns * Total Power Dissipation (TA=25 ) 2.5 W C PD Total Power Dis... See More ⇒

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