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View pn100 pn100a mmbt100 mmbt100a detailed specification:

October 2008 PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 SOT-23 B 1 1. Emitter 2. Base 3. Collector Mark PN100/PN100A Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 45 VCBO Collector-Base Voltage 75 VEBO Emitter-Base Voltage 6.0 IC Collector current - Continuous 500 TJ, Tstg Junction and Storage Temperature -55 +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle opera... See More ⇒

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