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View hat1046r detailed specification:

HAT1046R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-1222 (Z) 1st. Edition Mar. 2001 Features Low-voltage drive (2.5 V drive) Low on resistance Capable of 4 V gate drive Low on-resistance RDS(on) = 30 m typ. (at VGS = 4 V) External View SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate S 3 S1 5, 6, 7, 8 Drain MOS2 MOS1 HAT1046R Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 12 V Drain current ID 6 A Drain peak current ID (pulse)*1 48 A Body-drain diode reverse drain IDR 6 A current Permissible channel loss Pch*2 2.0 W Pch*2 3.0 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. 1 Drive operation ; When using ... See More ⇒

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