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View 2n6753 2n6754 detailed specification:

2n6753_2n67542n6753_2n6754

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6753 900 VCBO Collector-base voltage Open emitter V 2N6754 1000 VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 10 A IB Base current 5 A PD Total Power Dissipation TC=25 150 W Tj Junction temperature -65 175 Tstg Storage temperature -65 200 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resis... See More ⇒

 

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 2n6753 2n6754.pdf Design, MOSFET, Power

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