All Transistors. Equivalents Search

View ipd60r520cp detailed specification:

isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 6.8 A D I Drain Current-Single Pulsed 17 A DM P Total Dissipation @T =25 66 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 1.9 Channel-to-ambient thermal resistance /W Rth(j-a) 62 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark is... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 ipd60r520cp.pdf Design, MOSFET, Power

 ipd60r520cp.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd60r520cp.pdf Database, Innovation, IC, Electricity