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Isc N-Channel MOSFET Transistor RJK2006DPE FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 30 V GSS Drain Current-ContinuousTc=25 I 40 A D Tc=100 I Drain Current-Single Pulsed 100 A DM P Total Dissipation @T =25 100 W D C T Max. Operating Junction Temperature 150 ch Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.25 /W Rth(ch-a) Channel-to-ambient thermal resistance 40 1 isc website www.iscsemi.cn isc & iscsemi ... See More ⇒

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