View spd03n60s5 datasheet:

isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 3.2 A D I Drain Current-Single Pulsed 5.7 A DM P Total Dissipation @T =25 38 W D C Max. Operating Junction Temperature 150 T j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 3.3 Channel-to-ambient thermal resistance /W Rth(j-a) 75 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 spd03n60s5.pdf Design, MOSFET, Power

 spd03n60s5.pdf RoHS Compliant, Service, Triacs, Semiconductor

 spd03n60s5.pdf Database, Innovation, IC, Electricity