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BUZ 172 SIPMOS Power Transistor P channel Enhancement mode Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 37 C -5.5 Pulsed drain current IDpuls TC = 25 C -22 Avalanche energy, single pulse EAS mJ ID = -5.5 A, VDD = -25 V, RGS = 25 L = 8.4 mH, Tj = 25 C 170 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 40 Operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 3.1 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Data Sheet 1 05.99 BUZ 172 Electrical Characteristics, at Tj = 25 C, unless... See More ⇒

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