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View ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g detailed specification:

IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 6.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPB06CN10N G IPI06CN10N G IPP06CN10N G Package PG-TO263-3 PG-TO262-3 PG-TO220-3 Marking 06CN10N 06CN10N 06CN10N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 C2) 100 A D C T =100 C 88 C I T =25 C 400 Pulsed drain current3) D,pulse C E Avalanche energy, single pulse I =100 A, R =25 480 mJ AS D GS ... See More ⇒

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 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Design, MOSFET, Power

 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf RoHS Compliant, Service, Triacs, Semiconductor

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