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View 2n3821 2n3822 detailed specification:

Databook.fxp 1/13/99 2 09 PM Page B-3 01/99 B-3 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 50 V Small Signal Amplifiers Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 300 mW Power Derating 2mW/ C At 25 C free air temperature 2N3821 2N3822 Process NJ32 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS 50 50 V IG = 1 A, VDS = V 0.1 0.1 nA VGS = 30V, VDS = V Gate Reverse Current IGSS 0.1 0.1 A VGS = 30V, VDS = V TA = 150 C 0.5 2 V VDS = 15V, ID = 50 A Gate Source Voltage VGS 1 4 V VDS = 15V, ID = 200 A V VDS = 15V, ID = 400 A Gate Source Cutoff Voltage VGS(OFF) 4 6 V VDS... See More ⇒

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