All Transistors. Equivalents Search

View irf1010e detailed specification:

PD - 9.1670B IRF1010E HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 60V 175 C Operating Temperature Fast Switching RDS(on) = 0.012 Fully Avalanche Rated G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation TO-220AB levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throu... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irf1010e.pdf Design, MOSFET, Power

 irf1010e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1010e.pdf Database, Innovation, IC, Electricity