View irgc14c40lb detailed specification:
PD - 94060 IRGC14C40LB Ignition IGBT IRGC14C40LC IRGC14C40LD Die in Wafer Form IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features NOTES 1) Part number IRGC14C40LB are die in wafer form probed and uncut; IRGC14C40LC are die on film probed and Most Rugged in Industry cut; and IRGC14C40LD are probed die in wafle pack. 2) Refer- Logic-Level Gate Drive ence packaged parts are IRGS14C40L, IRGSL14C40L, and IRGB14C40L. > 6KV ESD Gate Protection Low Saturation Voltage TERMINAL DIAGRAM Collec tor High Self-clamped Inductive Switching Energy Packaged Characteristics Qualified for the Automotive Qualified [Q101] . BVCES = 370V min, 430V max Description The advanced IGBT process family includes a MOS gated, IC @ TC = 110 C = 14A R 1 Ga te N-channel logic level device which is intended for coil-on-plug R 2 VCE(on) typ= 1.2V @7... See More ⇒
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irgc14c40lb.pdf Design, MOSFET, Power
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