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View irgc15b60kb detailed specification:

PD - 94410 IRGC15B60KB Die in Wafer Form Features Features Features Features Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 15A Low VCE(on) VCE(on) typ.=1.8V @ 10 s Short Circuit Capability Square RBSOA IC(nom) @ 25 C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Control Applications E 150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel Operation Reference Standard IR Package Part IRGS15B60KD Qualified for Industrial Market Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (min, max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 0.95V min, 1.35V max IC = 3A, TJ = 25 C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V min TJ = 25 C, ... See More ⇒

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