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View ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3 detailed specification:

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 RDS(on) 300m IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D VDGR TJ = 25 C to 150 C, RGS = 1M 500 V S D (Tab) VGSS Continuous 30 V VGSM Transient 40 V TO-247 (IXFH) ID25 TC = 25 C 20 A IDM TC = 25 C, Pulse Width Limited by TJM 40 A IA TC = 25 C16 A G EAS TC = 25 C 300 mJ D S D (Tab) dv/dt IS IDM, VDD VDSS, TJ 150 C 35 V/ns PD TC = 25 C 380 W G = Gate D = Drain S = Source Tab = Drain TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C Fast Intrinsic Rectifier TL ... See More ⇒

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 ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf Design, MOSFET, Power

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