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View ixfk25n80 ixfk27n80 ixfn25n80 ixfn27n80 detailed specification:

Not for New Designs VDSS ID25 RDS(on) IXFK 27N80 800 V 27 A 0.30 HiPerFETTM Power MOSFETs IXFK 25N80 800 V 25 A 0.35 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 27N80 800 V 27 A 0.30 IXFN 25N80 800 V 25 A 0.35 TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 800 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 800 V G (TAB) D VGS Continuous 20 20 V S VGSM Transient 30 30 V miniBLOC, SOT-227 B (IXFN) ID25 TC = 25 C, Chip capability 27N80 27 27 A E153432 S 25N80 25 25 A G IDM TC = 25 C, pulse width limited by TJM 27N80 108 108 A D TC = 25 C 25N80 100 100 A IAR 27N80 14 14 A G 25N80 13 13 A S EAR TC= 25 C30 30 mJ S D S dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 5 5 V/ns G ... See More ⇒

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