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View ixfk27n80 ixfn27n80 ixfk25n80 ixfn25n80 detailed specification:

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs N-Channel Enhancement Mode IXFK 27N80 800 V 27 A 0.30 W Avalanche Rated, High dv/dt, Low trr IXFK 25N80 800 V 25 A 0.35 W IXFN 27N80 800 V 27 A 0.30 W IXFN 25N80 800 V 25 A 0.35 W Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 800 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 800 V VGS Continuous 20 20 V G (TAB) D VGSM Transient 30 30 V S ID25 TC = 25 C, Chip capability 27N80 27 27 A miniBLOC, SOT-227 B (IXFN) 25N80 25 25 A E153432 S IDM TC = 25 C, pulse width limited by TJM 27N80 108 108 A TC = 25 C 25N80 100 100 A G D IAR 27N80 14 14 A 25N80 13 13 A G EAR TC= 25 C30 30 mJ S D S dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS, 5 5 V/ns S TJ 150 C, RG = 2 W G = Gate D = Drain PD TC = 25 C 500 520 W S = Source TAB = Drain Either Source terminal... See More ⇒

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