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View ixfn200n10p detailed specification:

VDSS = 100 V IXFN 200N10P PolarTM HiPerFET ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 S VDSS TJ = 25 C to 175 C 100 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V VGSM Transient 30 V S ID25 TC = 25 C 200 A D ID(RMS) External lead current limit 100 A IDM TC = 25 C, pulse width limited by TJM 400 A G = Gate D = Drain S = Source IAR TC = 25 C60 A Either Source terminal S can be used as the EAR TC = 25 C 100 mJ Source terminal or the Kelvin Source (gate EAS TC = 25 C4 J return) terminal. dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns TJ 150 C, RG = 4 Features PD TC = 25 C 680 W Internationa... See More ⇒

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