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View ixgr72n60c3d1 detailed specification:

TM VCES = 600V GenX3 600V IGBT IXGR72N60C3D1 IC110 = 35A with Diode VCE(sat) 2.7V High-Speed Low-Vsat PT IGBT tfi(typ) = 55ns 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C Isolated Tab E IC25 TC = 25 C (Limited by Leads) 75 A IC110 TC = 110 C35 A G = Gate C = Collector IF110 TC = 110 C36 A E = Emitter ICM TC = 25 C, 1ms 400 A IA TC = 25 C50 A Features EAS TC = 25 C 500 mJ SSOA VGE = 15V, TVJ = 125 C, RG = 2 ICM = 150 A Silicon Chip on Direct-Copper Bond (DCB) Substrate (RBSOA) Clamped Inductive Load VCE VCES Optimized for Low Switching Losses PC TC = 25 C 200 W Square RBSOA Isolated Mounting Surface TJ -55 ... +150 C Anti-Parallel Ultra Fast ... See More ⇒

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