View krc660e-krc664e datasheet:

SEMICONDUCTOR KRC660E KRC664E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _ + B1 1.2 0.05 C 0.50 3 4 _ + D 0.2 0.05 EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) _ + H 0.5 0.05 _ + P J 0.12 0.05 P C 54 P 5 R1 Q1 Q2 B 1. Q1 IN (BASE) 2. Q , Q COMMON (EMITTER) 1 2 3. Q2 IN (BASE) 4. Q2 OUT (COLLECTOR) E 1 2 3 5. Q1 OUT (COLLECTOR) TESV MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 50 V PC * Collector Power Dissipation 200 mW VCEO Collector-Emitter Voltage 5... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

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