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View krc660f-krc664f detailed specification:

SEMICONDUCTOR KRC660F KRC664F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 Thin Fine Pitch Super mini 5pin Package. _ + B 1.0 0.05 _ + B1 0.8 0.05 C 0.35 _ + D 0.15 0.05 EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) H 0.38+0.02/-0.04 _ + T 0.1 0.05 54 C R1 Q1 Q2 1. Q1 IN (BASE) B 2. Q , Q COMMON (EMITTER) 1 2 3. Q2 IN (BASE) 4. Q2 OUT (COLLECTOR) 5. Q1 OUT (COLLECTOR) E 1 2 3 TFSV MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 20 V PC * Collector Power Dissipation 50 mW VCEO Col... See More ⇒

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