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View ktc1027 detailed specification:

SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTA1023. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHA RACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 120 V H 0.55 MAX FF _ J 14.00 + 0.50 VCEO Collector-Emitter Voltage 120 V K 0.35 MIN HH H _ L 0.75 + 0.10 VEBO E M 4 Emitter-Base Voltage 5 V M N 25 O 1.25 IC Collector Current 800 mA L 1 2 3 H P 1.50 Q 0.10 MAX IE Emitter Current -800 mA N N _ R 12.50 + 0.50 1. EMITTER S 1.00 PC Collector Power Dissipation 1 W 2. COLLECTOR Tj 3. BASE Junction Temperature 150 Tstg -55 150 Storage Temperature Range TO-92L ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT... See More ⇒

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