View 2sa1890 detailed specification:
SMD Type Transistors PNP Transistors 2SA1890 Features 1.70 0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SC5026. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 A Colletor Current - Pulse ICP -1.5 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -1 mA IB= 0 -80 V Emitter - base breakdown voltage... See More ⇒
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2sa1890.pdf Design, MOSFET, Power
2sa1890.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sa1890.pdf Database, Innovation, IC, Electricity
