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View 2sj199 detailed specification:

SMD Type MOSFET P-Channel MOSFET 2SJ199 1.70 0.1 Features VDS (V) =-100V ID =-1 A (VGS =-10V) 0.42 0.1 0.46 0.1 RDS(ON) 2 (VGS =-10V) RDS(ON) 2.5 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -1 A Pulsed Drain Current (Note.1) IDM -2 Power Dissipation Tc = 25 PD 2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 Note.1 PW 10 ms, duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250 A, VGS=0V -100 V Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -10 uA Gate-Body leakage current IGSS VDS=0V, VGS= 20V 10 uA Gate... See More ⇒

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