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View si2301ds-3 detailed specification:

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301DS (KI2301DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 Continuous Drain Current Ta=25 -2.4 -2.2 ID (TJ =150 ) *1 A Ta=70 -1.9 -1.8 Pulsed Drain Current *2 IDM -10 Power Dissipation *1 Ta=25 0.9 0.7 PD W Ta=70 0.57 0.45 Thermal Resistance.Junction- to-Ambient *1 120 145 RthJA /W *3 140 175 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 *1 Surface Mounted on FR4 Board, t 5 sec. *2 Pulse width ... See More ⇒

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