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View si2301ds detailed specification:

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301DS (KI2301DS) Features SOT-23 Unit mm +0.1 2.9 -0.1 VDS (V) =-20V +0.1 0.4-0.1 RDS(ON) 130m (VGS =-4.5V) 3 RDS(ON) 190m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 Continuous Drain Current *1 Ta=25 -2.3 ID A Ta=70 -1.5 Pulsed Drain Current *2 IDM -10 Power Dissipation *1 Ta=25 1.25 PD W Ta=70 0.8 Thermal Resistance.Junction- to-Ambient *1 100 RthJA /W Thermal Resistance.Junction- to-Ambient *3 166 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range *1 Surface Mounted on FR4 Board, t 5 sec. *2 Pulse width limited by maximum ... See More ⇒

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