View 2sc4332 2sc4332-z detailed specification:
DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors PACKAGE DRAWING (Unit mm) developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. FEATURES Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A) Fast switching speed tf 0.3 s MAX. (IC = 3 A) High DC current gain ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 60 V Base to Emitter Voltage VEBO 7.0 V Collector Current (DC) IC(DC) 5.0 A Note1 Collector... See More ⇒
Keywords - ALL TRANSISTORS SPECS
2sc4332 2sc4332-z.pdf Design, MOSFET, Power
2sc4332 2sc4332-z.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sc4332 2sc4332-z.pdf Database, Innovation, IC, Electricity
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