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NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 600 V 550 mW @ 10 V Parameter Symbol NDD Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS 25 V N-Channel MOSFET Continuous Drain Steady TC = ID 8.2 A D (2) Current RqJC State 25 C TC = 5.2 100 C G (1) Power Dissipation Steady TC = PD 94 W RqJC State 25 C S (3) Pulsed Drain Current tp = 10 ms IDM 34 A Operating Junction and Storage TJ, -55 to C Temperature TSTG +150 4 4 Source Current (Body Diode) IS 8.2 A Single Pulse Drain-to-Source Avalanche EAS 54 mJ 2 1 1 Energy (ID = 4 A) 3 23 Peak Diode Recovery (Note 1) dv/dt 15 V/ns IPAK DPAK CASE 369D CASE 369C Lead Tempe... See More ⇒

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