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NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features 100% Avalanche Tested http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source Voltage VGS 25 V Continuous Drain Steady TC = 25 C ID 5.7 A Current RqJC State TC = 100 C 3.6 G (1) Power Dissipation Steady TC = 25 C PD 74 W RqJC State Pulsed Drain tp = 10 ms IDM 20 A S (3) Current Operating Junction and Storage TJ, -55 to C 4 Temperature TSTG +150 4 Source Current (Body Diode) IS 5.7 A 2 1 Single Pulse Drain-to-Source Avalanche EAS 33 mJ 1 3 23 Energy (ID = 2 A) IPAK DPAK Peak Diode Recovery (Note 1) dv/dt 15 V/ns CASE 369D CASE 369C STYLE 2 S... See More ⇒

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