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NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response 90 mW @ 4.5 V 2.6 A N-Ch Independently Connected Devices to Provide Design Flexibility 20 V 125 mW @ 2.5 V 2.2 A This is a Pb-Free Device 170 mW @ -4.5 V -1.9 A P-Ch Applications -20 V 300 mW @ -2.5 V -1.0 A DC-DC Conversion Circuits Load/Power Switching with Level Shift D1 D2 MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G1 G2 Gate-to-Source Voltage (N-Ch & P-Ch) VGS 12 V N-Channel Steady TA = 25 C ID 2.6 A S1 S2 Continuous Drain Stat... See More ⇒

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