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Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type Darlington Unit mm For power amplification 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Complementary to 2SB950 and 2SB950A Features High foward current transfer ratio hFE 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25 C) +0.2 Parameter Symbol Ratings Unit 0.5 0.1 0.8 0.1 Collector to 2SD1276 60 VCBO V base voltage 2SD1276A 80 2.54 0.25 Collector to 2SD1276 60 5.08 0.5 VCEO V 1 2 3 emitter voltage 2SD1276A 80 1 Base 2 Collector Emitter to base voltage VEBO 5 V 3 Emitter Peak collector current ICP 8 A TO 220 Full Pack Package(a) Collector current IC 4 A Internal Connection Collector power TC=25 C 40 C PC W dissipation Ta=25 C 2 B Junction temperatur... See More ⇒

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