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View buk7528 buk7628-100a detailed specification:

Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench technology which Ptot Total power dissipation 166 W features very low on-state Tj Junction temperature 175 C resistance. It is intended for use in RDS(ON) Drain-source on-state automotive and general purpose resistance VGS = 10 V 28 m switching applications. PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum S... See More ⇒

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