View 2sj278 detailed specification:
2SJ278 Silicon P Channel MOS FET REJ03G0856-0200 (Previous ADE-208-1190) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PLZZ0004CA-A R (Package name UPAK ) D 1 1. Gate 2 3 2. Drain G 3. Source 4. Drain 4 S Note Marking is MY . *UPAK is a trademark of Renesas Technology Corp. Rev.2.00 Sep 07, 2005 page 1 of 6 2SJ278 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 1 A D Drain peak current I Note 1 4 A D (pulse) Body to drain diode reverse drain current I 1 A DR Channel dissi... See More ⇒
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2sj278.pdf Design, MOSFET, Power
2sj278.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sj278.pdf Database, Innovation, IC, Electricity
