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2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 (Previous ADE-208-580B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.35 typ. (at VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PLZZ0004CA-A R (Package name UPAK ) D 1 2 1. Gate 3 2. Drain G 3. Source 4. Drain 4 S Note Marking is AZ . *UPAK is a trademark of Renesas Technology Corp. Rev.4.00 Sep 07, 2005 page 1 of 6 2SJ518 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 2 A D Drain peak current I Note 1 4 A D (pulse) Body to drain diode reverse drain current I 2 A DR Avalanche current I Note 2 2 A AP ... See More ⇒

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