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2SJ526 Silicon P Channel MOS FET REJ03G0876-0600 Rev.6.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.6.00 Jun 05, 2006 page 1 of 7 2SJ526 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 12 A Drain peak current ID (pulse) Note 1 48 A Body to drain diode reverse drain current IDR 12 A Avalanche current IAP Note 3 12 A Avalanche energy EAR Note 3 12 mJ Channel dissipation Pch Note 2 25 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1.... See More ⇒

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