View 2sj535 datasheet:

2SJ535 Silicon P Channel MOS FET REJ03G0885-0400 (Previous ADE-208-627B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SJ535 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 30 A D Drain peak current I Note 1 120 A D (pulse) Body to drain diode reverse drain current I 30 A DR Avalanche current I Note 3 30 A AP Avalanche energy E Note 3 77 mJ AR Channel dissipation Pch Note 2 35 W Channel temperature Tch 150 C Storage ... See More ⇒

Keywords - ALL TRANSISTORS DATASHEET

 2sj535.pdf Design, MOSFET, Power

 2sj535.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj535.pdf Database, Innovation, IC, Electricity