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View 2sj539 detailed specification:

2SJ539 Silicon P Channel MOS FET REJ03G0886-0300 (Previous ADE-208-657A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S Rev.3.00 Sep 07, 2005 page 1 of 7 2SJ539 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 10 A D Drain peak current I Note 1 40 A D (pulse) Body to drain diode reverse drain current I 10 A DR Avalanche current I Note 3 10 A AP Avalanche energy E Note 3 8.5 mJ AR Channel dissipation Pch Note 2 40 W Channel temperature Tch 150 C Sto... See More ⇒

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