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2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 (Previous ADE-208-1337) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Low drive current Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1968 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage V 30 V GSS Drain current ID 12 A Drain peak current I *1 48 A D(pulse) Body to drain diode reverse drain current IDR 12 A Channel dissipation Pch*2 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2... See More ⇒

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