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2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)) (Package name LDPAK(S)-(1)) 4 D 4 1. Gate G 2. Drain 3. Source 4. Drain 1 2 3 1 2 S 3 Rev.4.00 May 15, 2006 page 1 of 8 2SK3211(L), 2SK3211(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS 20 V Drain current ID 25 A Drain peak current ID(pulse)Note1 100 A Body-drain diode reverse drain current IDR 25 A Avalanche current IAP Note3 25 A Avalanche energy EAR Note3 41 mJ Channel dissipation Pch Note2 100 W Cha... See More ⇒

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