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2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous ADE-208-752A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3 Rev.3.00 Sep 07, 2005 page 1 of 7 2SK3212 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current ID 10 A Drain peak current ID(pulse)Note1 40 A Body-drain diode reverse drain current IDR 10 A Avalanche current IAP Note3 10 A Avalanche energy EAR Note3 10 mJ Channel dissipation Pch Note2 20 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW ... See More ⇒

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