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View r07ds0399ej h5n2504dl detailed specification:

Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 (Previous REJ03G1106-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 16, 2011 Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Package name DPAK (S) ) 4 D 4 1. Gate 2. Drain G 3. Source 1 2 4. Drain 3 S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS 20 V Drain current ID 7 A Drain peak current ID (pulse) Note 1 28 A Body-drain diode reverse drain current IDR 7 A Body-drain diode reverse drain peak current IDR (pulse) Note 1 28 A Avalanche current IAP Note 3 7 A Channel dissipation Pch N... See More ⇒

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